Implantation of ytterbium ions into group II-VI compounds
- 1 January 1973
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 20 (4) , 239-244
- https://doi.org/10.1080/00337577308232290
Abstract
50 keV ytterbium ions have been implanted into ZnS, CdS, ZnSe, CdTe, CdSe and ZnTe and, after subsequent annealing treatments of varying degree, the cathodoluminescence emission spectra produced by 10 keV or 100 keV electron excitation have been studied.Keywords
This publication has 7 references indexed in Scilit:
- Photoluminescence of Ion-Implanted Oxygen in ZnTeJournal of Applied Physics, 1971
- Ion implantation doping of zinc sulphide thin filmsSolid State Communications, 1971
- A multi-sample liquid helium cryostat for electron damage luminescence studiesCryogenics, 1970
- ion implantation of bismuth into GaP. I. photoluminescenceRadiation Effects, 1970
- PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1969
- The doping of semiconductors by ion bombardmentNuclear Instruments and Methods, 1965
- A sputtering ion sourceNuclear Instruments and Methods, 1965