Growth and properties of new artificial doping superlattices in GaAs
- 1 May 1982
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 13 (3) , 5-22
- https://doi.org/10.1016/s0026-2692(82)80181-x
Abstract
No abstract availableKeywords
Funding Information
- Bundesministerium für Forschung und Technologie
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