High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
- 1 July 1992
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (1) , 319-321
- https://doi.org/10.1063/1.352143
Abstract
The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, λ=1.3 μm, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2 and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8–20 mA at a cavity length L=200–500 μm and a stripe width about 2–3 μm. The maximum continuous wave power in single lateral mode operation was 160 mW.This publication has 4 references indexed in Scilit:
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