Influence of {111} regrowth sidewall interfaces on the performance of 1.54 μm InGaAsP/InP etched-mesa-buried-heterostructure lasers
- 1 April 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (7) , 2434-2437
- https://doi.org/10.1063/1.337913
Abstract
The quality of {111} sidewall interfaces formed during liquid phase epitaxial regrowth around an etched mesa in an etched-mesa-buried-heterostructure laser device has been studied using cross-sectional transmission electron microscopy, cross-sectional transmission cathodoluminescence, and energy dispersive x-ray analysis. The results are correlated with the optical performance and electrical characteristics of the device before the aging test. It is found that the interfacial lattice imperfection will affect the device performance only when the defects are nonradiative recombination centers or they constitute a leakage path for the current. The possible causes for a defective interface will be discussed.This publication has 8 references indexed in Scilit:
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