Liquid phase epitaxial growth of InP using In1−xSnx melts
- 31 July 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (1) , 17-30
- https://doi.org/10.1016/0022-0248(86)90005-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- GaInAsP/InP buried heterostructure formation by liquid phase epitaxyApplied Physics Letters, 1984
- Crystal growth progress in response to the needs for optical communicationsJournal of Crystal Growth, 1983
- Liquid phase epitaxial growth on {111}In planes of InPJournal of Applied Physics, 1983
- Growth of InP and InGaAsP (E g≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressureApplied Physics Letters, 1982
- Single mode operation of buried heterostructure lasers by loss stabilizationIEEE Journal of Quantum Electronics, 1981
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980
- Prevention of InP surface decomposition in liquid phase epitaxial growthApplied Physics Letters, 1980
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergenceIEEE Journal of Quantum Electronics, 1975
- Phase relations, crystal growth and heteroepitaxy in the quaternary system Cd, Sn, In and PJournal of Crystal Growth, 1974