Correlation between degradation and device characteristic changes in InGaAsP/InP buried heterostructure lasers
- 15 February 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4) , 1031-1037
- https://doi.org/10.1063/1.336537
Abstract
Correlations between degradation and device characteristics are investigated in InGaAsP/InP buried heterostructure lasers. The logarithm of threshold-current increase rates is confirmed to be proportional to the voltage decrease at low current when injected carrier lifetime decreases during aging. When leakage current increases during aging, devices having a low initial voltage also tend to degrade to a large extent. These correlations hold within an operating range limited by the device structure and the material used during fabrication.This publication has 13 references indexed in Scilit:
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