Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation
- 1 June 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (11) , 921-923
- https://doi.org/10.1063/1.92979
Abstract
Rapid degradation has been observed for InGaAsP/InP double heterostructure lasers. It has been found that the rapid degradation is due to 〈110〉 dark line defects generated parallel to the stripe and its occurrence depends on the thickness of the InGaAsP contact layer. It has been shown that formation of a InGaAsP contact layer of more than 0.5-μm thickness is necessary in order to realize high reliability of the lasers.Keywords
This publication has 14 references indexed in Scilit:
- Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasersIEEE Journal of Quantum Electronics, 1981
- Three-layer 1.3 µm In1-xGaxAsyP1-ylasers with quaternary confining layersIEEE Journal of Quantum Electronics, 1981
- Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1981
- Self-oscillations and dynamic behavior of aged InGaAsP laser diodesIEEE Journal of Quantum Electronics, 1981
- Accelerated aging test of InGaAsP/InP double-heterostructure laser diodes with single transverse modeApplied Physics Letters, 1981
- Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µmJapanese Journal of Applied Physics, 1980
- 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperatureIEEE Journal of Quantum Electronics, 1979
- Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasersIEEE Journal of Quantum Electronics, 1979
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977