The pulse height defect in silicon surface barrier detectors
- 15 October 1971
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 96 (3) , 373-381
- https://doi.org/10.1016/0029-554x(71)90603-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Pulse-height defects for heavy ions in a silicon surface-barrier detectorNuclear Instruments and Methods, 1971
- Influence of carrier diffusion effects on window thickness of semiconductor detectorsNuclear Instruments and Methods, 1970
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970
- Window Thickness and Rectifying Process in Surface Barrier DetectorsIEEE Transactions on Nuclear Science, 1968
- Some Heavy-Ion Stopping PowersPhysical Review B, 1966
- Semiconductor Particle DetectorsAnnual Review of Nuclear Science, 1962
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- The Influence of a Transverse Magnetic Field on the Conductivity of Thin Metallic FilmsPhysical Review B, 1950