GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

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Abstract
Lattice-matched GaN layers are grown by metalorganic chemical-vapor deposition on free-standing GaN substrates, which were fabricated by laser-induced liftoff of 300-μm-thick filmsgrown by hydride vapor-phase epitaxy. Pretreatment of the free-standing films before the homoepitaxialgrowth of GaN involved mechanical polishing of the Ga-face surface and a final Cl-based plasmaetch. By a combination of high-resolution x-ray diffraction, atomic-force microscopy, as well as Raman and photoluminescence spectroscopy, the structural and optical properties of the lattice-matched GaN layers are characterized. X-ray diffraction patterns of (0002), (0004), and (0006) reflexes with a full width at half maximum (FWHM) of as low as 20 arcsec are obtained. The dislocation density is determined to be 2×10 7 cm −2 and the surface morphology is dominated by bilayer steps with terraces of about 200 nm. The lattice mismatch between the GaN substrate and the homoepitaxial layer is below 3×10 −5 , resulting in a very narrow FWHM of the excitonic luminescence of 0.5 meV.