Silicon carbide thyristors for electric guns
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 33 (1) , 432-437
- https://doi.org/10.1109/20.560051
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High power semiconductors for pulsed switchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A high-current and high-temperature 6H-SiC thyristorIEEE Electron Device Letters, 1996
- Long minority carrier lifetimes in 6H SiC grown by chemical vapor depositionApplied Physics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- An overview of high-temperature electronic device technologies and potential applicationsIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1994
- Evaluation of SCRs as Millisecond Switches for Electric Gun LaunchersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- The use of thyristors as main switches in EML applicationsIEEE Transactions on Magnetics, 1993
- Power semiconductors empirical diagrams expressing life as a function of temperature excursionIEEE Transactions on Magnetics, 1993
- The forward characteristics of thyristorsProceedings of the IEEE, 1967