Transient characteristics of gan-based heterostructure field-effect transistors
- 19 February 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 51 (2) , 634-642
- https://doi.org/10.1109/tmtt.2002.807687
Abstract
DC current-switching and power-switching transients of various GaN-based FET structures are investigated. Two different characteristics are compared, namely, thermal and electronic transients. While the thermal transients are mainly reflected in changes in channel carrier mobility, the electronic transients are dominated by charge instabilities caused by the polar nature of the material. The discussion of the electronic transients focuses, therefore, on instabilities caused by polarization-induced image charges. Three structures are discussed, which are: 1) a conventional AlGaN/GaN heterostructure FET; 2) an InGaN-channel FET; and 3) an AlGaN/GaN double-barrier structure. In structures 2) and 3), field-induced image charges are substituted by doping impurities, eliminating this source of related instability. This is indeed observed.Keywords
This publication has 22 references indexed in Scilit:
- Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Switching behaviour of GaN-based HFETs: thermal and electronic transientsElectronics Letters, 2002
- Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistorElectronics Letters, 2002
- Small signal and power measurements of AlGaN/GaNHEMTwith SiN passivationElectronics Letters, 2001
- Evaluation of effective electron velocity in AlGaN/GaNHEMTsElectronics Letters, 2000
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- Evaluation of the temperature stability of AlGaN/GaN heterostructure FETsIEEE Electron Device Letters, 1999
- Self-heating in high-power AlGaN-GaN HFETsIEEE Electron Device Letters, 1998
- Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 VIEEE Electron Device Letters, 1997