Switching behaviour of GaN-based HFETs: thermal and electronic transients

6 June 2002

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 38 (12) , 603-605
https://doi.org/10.1049/el:20020417

Abstract

Switching GaN-based devices from a quiescent drain bias point in pinch-off to an open channel condition such as in pulsed power operation will cause thermal transients due to self-heating and electronic transients owing to charge storage effects with opposite gradients. The superposition of both effects may result in a complex transient behaviour or even cancellation.

Keywords

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