Epitaxially-grown GaN junction field effect transistors
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (3) , 507-511
- https://doi.org/10.1109/16.824716
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contactsApplied Physics Letters, 1998
- Schottky barrier photodetectors based on AlGaNApplied Physics Letters, 1998
- High power AlGaN/GaN HEMTs for microwave applicationsSolid-State Electronics, 1997
- Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHzElectronics Letters, 1997
- Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxyApplied Physics Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- High Frequency AlGaN/GaN MODFET'sMRS Internet Journal of Nitride Semiconductor Research, 1997
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Ion-implanted GaN junction field effect transistorApplied Physics Letters, 1996