Active matrix liquid crystal display design using low and high temperature processed polysilicon TFTs
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressingIEEE Electron Device Letters, 1990
- Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1989
- Improved subthreshold characteristics of n-channel SOI transistorsIEEE Electron Device Letters, 1986