Piezoresistance in-Type ZnTe
- 1 November 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 140 (3A) , A923-A925
- https://doi.org/10.1103/physrev.140.a923
Abstract
Piezoresistance coefficients for -type zinc telluride were determined at room temperature. The data are consistent with a valence-band model consisting of warped energy surfaces degenerate at , essentially similar to that found in Ge, Si, and III-V compounds.
Keywords
This publication has 10 references indexed in Scilit:
- Band parameters of semiconductors with zincblende, wurtzite, and germanium structureJournal of Physics and Chemistry of Solids, 1963
- Fundamental Reflectivity and Band Structure of ZnTe, CdTe, and HgTePhysical Review B, 1963
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- The absorption edge of zinc tellurideJournal of Physics and Chemistry of Solids, 1961
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961
- Experimental Investigation of Conduction Band of GaSbPhysical Review B, 1960
- Apparatus for Piezoresistance MeasurementReview of Scientific Instruments, 1958
- Piezoresistance of Indium AntimonidePhysical Review B, 1957
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954