New apparatus for multi-layer liquid phase epitaxy
- 1 February 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 32 (2) , 157-160
- https://doi.org/10.1016/0022-0248(76)90027-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Improved boat for multiple-bin liquid phase epitaxyJournal of Crystal Growth, 1973
- Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinementApplied Physics Letters, 1973
- GaAsGaAlAs heterojunction transistor for high frequency operationSolid-State Electronics, 1972
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- Novel GaAs–(AlGa)As Cold-Cathode Structure and Factors Affecting Extended OperationApplied Physics Letters, 1972
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970