Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs
- 1 January 1999
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 32 (10A) , A51-A55
- https://doi.org/10.1088/0022-3727/32/10a/311
Abstract
No abstract availableKeywords
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