Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions
- 1 July 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (4) , 1279-1285
- https://doi.org/10.1116/1.589451
Abstract
No abstract availableKeywords
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