Improvement of hot-carrier and radiation hardnesses in metal-oxide-nitride-oxide semiconductor devices by irradiation-then-anneal treatments
- 1 April 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (4) , 612-614
- https://doi.org/10.1109/16.278518
Abstract
[[abstract]]The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400 °C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain.[[fileno]]2060110010001[[department]]工程與系統科學Keywords
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