Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers
- 1 October 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 143 (1-2) , 7-14
- https://doi.org/10.1016/0022-0248(94)90361-1
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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