CVD Cu interconnections for ULSI
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 297-300
- https://doi.org/10.1109/iedm.1992.307364
Abstract
CVD Cu has been investigated as an interconnection material. The Cu films have excellent step coverage due to the very low sticking coefficient of 0.015 of the precursor, Cu/sup 1+/(tmvs) (hfac). High aspect ratio trenches and vias can be conformally filled without formation of keyholes. Using etchback processes, lines and plugs can be formed. At temperatures typically encountered in back-end processing, no significant diffusion of Cu through several commonly used inter-metal dielectrics and TiW is observed. CVD Cu interconnections have been incorporated into a CMOS process. No degradation in device characteristics due to Cu is detected.Keywords
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