High-density high-reliability tungsten interconnection by filled interconnect groove metallization
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 952-956
- https://doi.org/10.1109/16.3350
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- An nMOS VLSI process for fabrication of a 32-bit CPU chipIEEE Journal of Solid-State Circuits, 1981