Primary and secondary trimethylsilylmethylstibines. Synthesis, characterization and chemical vapor deposition properties
- 1 May 1993
- journal article
- Published by Elsevier in Journal of Organometallic Chemistry
- Vol. 449 (1-2) , 119-123
- https://doi.org/10.1016/0022-328x(93)80114-q
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Synthesis, characterization, and chemical vapor deposition properties of primary and secondary neopentylstibine. New antimony precursors for MOCVDChemistry of Materials, 1992
- High-mobility InSb grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimonyApplied Physics Letters, 1991
- Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld andApplied Physics Letters, 1990
- Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPxJournal of Electronic Materials, 1988
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- MOVPE growth of InP using isobutylphosphine and tert-butylphosphineJournal of Crystal Growth, 1986
- The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1986
- The Methylstibines and the Monomer DimethylstibinoborineJournal of the American Chemical Society, 1959