High-purity, ultrahigh-resolution calixarene electron-beam negative resist
- 1 November 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (6) , 3424-3427
- https://doi.org/10.1116/1.1321274
Abstract
Calixarene is a promising high-resolution negative electron-beam resist having a resolution of the order of 10 nm because of its low molecular weight. We have made a purified calixarene resist containing metal contaminants whose concentrations are measured in parts per billion and which therefore do not degrade the performance of silicon-based electron devices. The purity of the calixarene itself was also improved and we obtained high-purity calix[6]arene and high-purity calix[7]arene, both of which contain the main component, which is more than 95% of all the calixarene present. The resolution of both purified calixarene resists is almost the same as that of the unpurified calixarene, but the sensitivity of calix[7]arene is higher than that of calix[6]arene because its molecular weight is higher.Keywords
This publication has 10 references indexed in Scilit:
- Resolution of calixarene resist under low energy electron irradiationMicroelectronic Engineering, 1998
- Transistor operation of 30-nm gate-length EJ-MOSFETsIEEE Electron Device Letters, 1998
- Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam LithographyJapanese Journal of Applied Physics, 1997
- Calixarenes-prospective materials for nanofabrications-Microelectronic Engineering, 1997
- Nanometer-scale resolution of calixarene negative resist in electron beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Ultrahigh resolution of calixarene negative resist in electron beam lithographyApplied Physics Letters, 1996
- Accurate nano-EB lithography for 40-nm gate MOSFETsMicroelectronic Engineering, 1996
- An Electron Beam Nanolithography System and its Application to Si NanofabricationJapanese Journal of Applied Physics, 1995
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing SystemJapanese Journal of Applied Physics, 1991
- Polymeric Electron Beam ResistsJournal of the Electrochemical Society, 1969