Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs
- 31 December 1992
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 23, 23-71
- https://doi.org/10.1016/0960-8974(92)90019-m
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
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