Schottky Barrier Height of Al/n-In0.53Ga0.47As and Nb/n-In0.53Ga0.47As Diodes
- 1 January 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (1A) , L7
- https://doi.org/10.1143/jjap.26.l7
Abstract
The barrier heights of Al/n-In0.53Ga0.47As and Nb/n-In0.53Ga0.47As diodes were measured using standard current-voltage and current-temperature techniques. An Al film was evaporated in situ on MBE-grown n-InGaAs. A Nb film was deposited by rf sputtering on an Ar sputter cleaned surface. The barrier height was 0.2 eV for the Al/n-InGaAs diode, and below 0.1 eV for the Nb/n-InGaAs diode.Keywords
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