MOCVD growth and characterization of GaAs and GaP grown on Si substrates
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 499-503
- https://doi.org/10.1016/0022-0248(88)90573-8
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
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