Directional dependence of the spontaneous emission of Si quantum wires
- 2 January 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 65 (3) , 035326
- https://doi.org/10.1103/physrevb.65.035326
Abstract
The electron states in silicon quantum wires obtained within an effective approximation are used to study the spontaneous emission rate for direct and phonon-assisted transitions. It is found that light emission from the wires has strong direct character if the wires are directed along the main crystallographic directions or along [110]. The intensity of phonon-assisted transitions is in this case three orders of magnitude smaller.Keywords
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