Impurity conduction and the minimum metallic conductivity in n-type InSb
- 1 January 1981
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (1) , 177-181
- https://doi.org/10.1080/01418638108225812
Abstract
Results presented in an early paper about impurity conduction in n-type indium antimonide at low temperatures, in the presence of a magnetic field, have been questioned because no data on longitudinal magnetoresistance and Hall effect were published. New results are presented here on the transport processes in the same ranges of temperature and magnetic field when the impurity concentration is near the concentration corresponding to the metal–non-metal transition as defined by the Mott criterion. The evidence for an impurity band and of conduction by excitation to a mobility edge is reviewed in the light of the behaviour of longitudinal resistivity and Hall effect when the temperature and magnetic field are varied.Keywords
This publication has 7 references indexed in Scilit:
- Magnetic freeze-out in doped semiconductors the metal non-metal transition in n-type InSbPhilosophical Magazine Part B, 1980
- Metal-insulator transitions induced by a magnetic fieldJournal of Non-Crystalline Solids, 1979
- Magnetoresistance and Hall effect in n-type indium antimonide in the magnetic freeze-out regionJournal of Physics C: Solid State Physics, 1978
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures II. Magnetic Field-Induced Metal-Nonmetal TransitionJournal of the Physics Society Japan, 1977
- Experimental Evidence of an Electronic Localization in n‐Type InSb Using a Microwave TechniquePhysica Status Solidi (b), 1975
- Structure of the Impurity Band and Magnetic‐Field‐Induced Metal‐Non‐Metal Transition in n‐Type InSbPhysica Status Solidi (b), 1975
- Etude de la structure électronique de de l'antimoniure d'indium de type n par une méthode de battement hyperfréquencePhysica Status Solidi (b), 1972