Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- 1 November 1978
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 45 (5) , 1630-1637
- https://doi.org/10.1143/jpsj.45.1630
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optical determination of carrier mobility in GaAsSolid State Communications, 1976
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Hot-Electron Distribution in n-GaAs Derived from Photoluminescence Measurements with Applied Electric FieldJournal of Applied Physics, 1971
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in-Type GermaniumPhysical Review B, 1964
- Anisotropy of the energy distribution function of hot holes in germaniumPhysics Letters, 1963