Optical determination of carrier mobility in GaAs
- 31 December 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 18 (7) , 861-863
- https://doi.org/10.1016/0038-1098(76)90224-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Lineshape analysis of free-electron to bound-hole transitions in electric fieldsSolid State Communications, 1975
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Impact Ionization of Donors in Semiconductors as a Tool for Photoluminescence InvestigationsJournal of Applied Physics, 1972
- Hot-Electron Distribution in n-GaAs Derived from Photoluminescence Measurements with Applied Electric FieldJournal of Applied Physics, 1971
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- RADIATIVE RECOMBINATION FROM FIELD-EXCITED HOT CARRIERS IN n-GaAsApplied Physics Letters, 1970
- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- Determination of Hot Carrier Distribution Function from Anisotropic Infrared Absorption in-Type GermaniumPhysical Review Letters, 1963
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960