Electronic-Structure Calculation of 3d Transition-Metal Point Defects in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electron nuclear double resonance of interstitial iron in siliconPhysical Review B, 1984
- Localization and Magnetism of an Interstitial Iron Impurity in SiliconPhysical Review Letters, 1984
- Migration of interstitials in siliconPhysical Review B, 1984
- Density-Functional Theory of the Energy GapPhysical Review Letters, 1983
- Physical Content of the Exact Kohn-Sham Orbital Energies: Band Gaps and Derivative DiscontinuitiesPhysical Review Letters, 1983
- Applicability of the local-density theory to interstitial transition-metal impurities in siliconPhysical Review B, 1983
- Self-consistent impurity calculations in the atomic-spheres approximationPhysical Review B, 1983
- Chromium and chromium-boron pairs in siliconApplied Physics A, 1983
- Theory of substitutional and interstitialimpurities in siliconPhysical Review B, 1982
- Theory of interstitial transition-metal impurities in siliconPhysical Review B, 1981