Low-temperature carrier scattering anomalies in ferroelectric Pb1-xGexTe
- 20 September 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (26) , L689-L696
- https://doi.org/10.1088/0022-3719/17/26/006
Abstract
Resistivity increase near the ferroelectric phase transition and the resistivity enhancement towards 0K for Pb1-xGexTe crystals with small x and presented. Hall coefficient dependence on temperature and hydrostatic pressure points out the changes of the carrier scattering rate as an origin of the examined phenomena. The assumption about the off-centre displacement of the small Ge2+ ion from the regular cation site of the PbTe matrix is adopted to propose the possible mechanism of the mobility decrease.Keywords
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