An investigation of the phosphorus doping mechanism in a-Si by sweep-out experiments

This publication has 21 references indexed in Scilit:

• Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon
  Physical Review B, 1990
• Capacitance Studies of Metastable States in Light-Soaked, Quench-Cooled, and Bias-Annealed N-Type Hydrogenated Amorphous Silicon
  MRS Proceedings, 1990
• Hydrogen bonding and diffusion in crystalline silicon
  Physical Review B, 1989
• Preparation-dependent relaxation in n-type a-Si:H
  Philosophical Magazine Letters, 1989
• Bias dependence of instability mechanisms in amorphous silicon thin-film transistors
  Applied Physics Letters, 1987
• Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
  Physical Review Letters, 1987
• A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon
  Applied Physics A, 1986
• Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
  Physical Review Letters, 1986
• Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated silicon
  Physical Review B, 1983
• Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen Alloys
  Physical Review Letters, 1977