Nernst‐Ettingshausen and Seebeck Effect of Pure and Electron‐Irradiated Tellurium at Low Temperatures
- 1 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 61 (2) , 509-519
- https://doi.org/10.1002/pssb.2220610216
Abstract
For the first time experimental data of the Nernst‐Ettingshausen effect at low temperatures in tellurium are reported. Measurements of resistivity, Hall coefficient, Seebeck coefficient, and Nernst‐Ettingshausen coefficient on the same sample allow to deduce directly the scattering exponent r, which characterizes the energy dependence of the relaxation time τ. The results clearly reveal a strong anisotropy in the scattering factor r. This is explained by the presence of dislocations. Irradiations with 1 MeV electrons at low temperatures confirm earlier results on the recovery stages I and II in tellurium. It is demonstrated that the Nernst‐Ettingshausen effect is a very useful tool to decide whether recombination or only rearrangement of radiation induced defects occurs during sample recovery.Keywords
This publication has 15 references indexed in Scilit:
- Valence Band Structure of Tellurium from Shubnikov-de Haas ExperimentsPhysica Status Solidi (b), 1972
- Cyclotron Resonance in TelluriumPhysical Review B, 1972
- Polaron scattering of free carriers in telluriumPhysica Status Solidi (b), 1971
- Déformation plastique du tellure monocristallin. II. ThéoriePhysica Status Solidi (b), 1970
- Déformation plastique du tellure monocristallin. I. Faits expérimentauxPhysica Status Solidi (b), 1970
- Observation des dislocations dans le tellure par une technique de figures d'attaqueMaterials Science and Engineering, 1969
- PolaronsPublished by Elsevier ,1968
- Nuclear Quadrupole Resonance of 35Cl in Solid ChlorineJournal of the Physics Society Japan, 1966
- Piezoelectric Scattering in SemiconductorsPhysical Review B, 1964
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950