New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (6) , 304-306
- https://doi.org/10.1109/55.767106
Abstract
This paper reports on self-aligned T-gate InGaP/GaAs FETs using n/sup +//N/sup +///spl delta/(P/sup +/)/n structures. N/sup +/-InGaP//spl delta/(P/sup +/)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FETs together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5/spl times/100 (0.6/spl times/100) /spl mu/m/sup 2/ obtained from 2/spl times/100 (1/spl times/100) /spl mu/m/sup 2/ gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.Keywords
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