Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition
- 24 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (8) , 946-948
- https://doi.org/10.1063/1.118449
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Initial stage of cubic boron nitride film growth from vapor phaseJournal of Applied Physics, 1996
- Transmission electron microscopic study of c -BN films deposited on a Si substrateApplied Physics Letters, 1995
- Ion-assisted pulsed laser deposition of cubic boron nitride filmsJournal of Applied Physics, 1994
- Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor depositionApplied Physics Letters, 1994
- Effects of the substrate bias on the formation of cubic boron nitride by inductively coupled plasma enhanced chemical vapor depositionJournal of Applied Physics, 1994
- Phase evolution in boron nitride thin filmsJournal of Materials Research, 1993
- Phase control of cubic boron nitride thin filmsJournal of Applied Physics, 1992
- Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating methodJournal of Vacuum Science & Technology A, 1990
- Preparation of cubic boron nitride film by activated reactive evaporation with a gas activation nozzleJournal of Vacuum Science & Technology A, 1987