Boron Doping to Microeryslalline SiNx:H Films

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Abstract
Microcrystalline SiN x :H films were prepared by r.f. glow-discharge of SiH4–B2H6–N2–H2 mixtures with the gas volume ratio of N2/SiH4=0.03. The volume fraction of the crystalline phase and the crystallite size decrease with an increase in B-doping ratio, R B. With increasing R B, the dark conductivity σd increases up to a value larger than 10-3 Ω-1cm-1 (the activation energy E a is 0.1 eV and the optical gap E g is 1.9eV) at R B=5×10-3 through the minimum σd smaller than 10-12 Ω-1cm-1 (E a=1.1 eV, E g=1.75 eV) at R B around 10-4 to 10-3. The slope K in Tauc's relation increase with R B.