External reflection IR spectroscopy from trimethylgallium adsorbed at a GaAs (100) surface at 300 K - a feasibility study
- 1 February 1992
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 116 (3-4) , 511-514
- https://doi.org/10.1016/0022-0248(92)90661-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Growth mechanism studies in CBE/MOMBEJournal of Crystal Growth, 1991
- The decomposition of trumethylgallium, triethylgallium and trimethylaluminum on Si(100)Vacuum, 1990
- The adsorption of triethylgallium on GaAs (100) at 300 KVacuum, 1990
- The thermal decomposition of triethylgallium on GaAs(100)Vacuum, 1990
- Understanding of surface chemistry of III–V metalorganic chemical vapor deposition reactantsJournal of Vacuum Science & Technology A, 1989
- Laser-induced decomposition of triethylgallium and trimethylgallium adsorbed on gallium arsenide(100)The Journal of Physical Chemistry, 1989
- Surface infrared spectroscopySurface Science Reports, 1988
- Surface Infrared Study of Si(100)-(2×1)HPhysical Review Letters, 1984
- Design of a reflection–absorption experiment for studying the ir spectrum of molecules adsorbed on a metal surfaceJournal of Vacuum Science and Technology, 1975
- Infrared Study of Adsorbed Molecules on Metal Surfaces by Reflection TechniquesThe Journal of Chemical Physics, 1966