Nanoscale Mapping of Strain and Composition in Quantum Dots Using Kelvin Probe Force Microscopy
- 23 June 2007
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 7 (7) , 2089-2093
- https://doi.org/10.1021/nl071031w
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dotsPhysical Review B, 2005
- Nanoscale potential distribution across multiquantum well structures: Kelvin probe force microscopy and secondary electron imagingJournal of Applied Physics, 2005
- Quantum dot infrared photodetectors: Comparison of experiment and theoryPhysical Review B, 2005
- Reconstruction of electrostatic force microscopy imagesReview of Scientific Instruments, 2005
- High-power 980 nm quantum dot broad area lasersElectronics Letters, 2003
- High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopyApplied Physics Letters, 1999
- Mechanics of coherent and dislocated island morphologies in strained epitaxial material systemsJournal of Applied Physics, 1997
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996
- Improving InAs double heterostructure lasers with better confinementIEEE Journal of Quantum Electronics, 1992
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990