Discovery of electron traps in lpe gaas grown from a bismuth melt
- 16 May 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (1) , K43-K46
- https://doi.org/10.1002/pssa.2210950155
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Technological and physical aspects of the main EL2 defect in GaAsCzechoslovak Journal of Physics, 1984
- Properties and nature of the main electron trap in GaAsCzechoslovak Journal of Physics, 1984
- Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAsPhysica Status Solidi (b), 1983
- A Multipurpose Graphite Boat for LPE Growth of Multilayer HeterostructuresCrystal Research and Technology, 1982
- Study of gallium arsenide deep centers by capacitance spectroscopyRussian Physics Journal, 1980
- Electron and hole capture cross-sections at deep centers in gallium arsenideRevue de Physique Appliquée, 1979
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974