Deep defect determination by the constant photocurrent method (CPM) in annealed or light soaked amorphous hydrogenated silicon (a-Si:H)
- 1 September 1994
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 34 (1-4) , 533-539
- https://doi.org/10.1016/0927-0248(94)90082-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Limits of the Constant Photocurrent Method (CPM) for the determination of the deep defect density in amorphous hydrogenated silicon (a-Si:H)Journal of Non-Crystalline Solids, 1993
- Subbandgap absorption spectra of slightly doped a-Si:H measured with constant photocurrent method (CPM) and photothermal deflection spectroscopy (PDS)Solid State Communications, 1993
- Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous siliconJournal of Applied Physics, 1992
- How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:HJournal of Non-Crystalline Solids, 1991
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981