A universal electrothermal FET model suitable for general large-signal applications

Publisher Website

1 October 1996

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/euma.1996.337565

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

Statistical circuit simulation with measurement-based active device models: implications for process control and IC manufacturability
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
An electrothermal functional model of the microwave FET suitable for nonlinear simulation
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Negative R _z and R _d in GaAs FET and HEMT equivalent circuits
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Modeling MESFETs for intermodulation analysis of mixers and amplifiers
IEEE Transactions on Microwave Theory and Techniques, 1990