The base resistance controlled thyristor (BRT)-a new MOS gated power thyristor
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 4, 138-141
- https://doi.org/10.1109/ispsd.1991.146084
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Design aspects of MOS controlled thyristor elementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The MOS depletion-mode thyristor: a new MOS-controlled bipolar power deviceIEEE Electron Device Letters, 1988
- MOS Controlled thyristors (MCT's)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983