Band alignment in GaxIn1−xP/InP heterostructures
- 17 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (3) , 273-275
- https://doi.org/10.1063/1.111178
Abstract
We report low temperature optical absorption measurements on GaxIn1−xP/InP (x<0.2) multiple quantum wells and strained‐layer superlattices. The spectra show several well‐defined peaks whose positions can be fitted within an envelope‐function formalism including strain effects. We deduce conduction band offsets between the larger gap ternary and smaller gap binary materials ranging from 30 to 50 meV. Since these values are intermediate between the strain‐induced shifts for the light‐ and heavy‐hole valence bands, the electrons and heavy holes are localized in the InP layers (type I system), whereas the light holes have their quantum wells in the GaInP layers (type II system).Keywords
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