Supercritical resist drying for isolated nanoline formation
- 1 November 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 19 (6) , 2709-2712
- https://doi.org/10.1116/1.1418411
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platformsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Supercritical drying for water-rinsed resist systemsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Aqueous-based photoresist drying using supercritical carbon dioxide to prevent pattern collapseJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Supercritical drying for nanostructure fabrication without pattern collapseMicroelectronic Engineering, 1999
- Influence of edge roughness in resist patterns on etched patternsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuationsMicroelectronic Engineering, 1998
- Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse waterApplied Physics Letters, 1995
- Mechanism of Resist Pattern CollapseJournal of the Electrochemical Society, 1993
- Swelling and surface forces-induced instabilities in nanoscopic polymeric structuresJournal of Applied Physics, 1992