Dark J-V characteristic of p-i-n a-Si:H solar cells
- 15 September 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (6) , 2667-2674
- https://doi.org/10.1063/1.344235
Abstract
The J‐V characteristics of p‐i‐n solar cells in the dark have been simulated by solving numerically the full set of transport equations. We have analyzed the dependence of dark current on the density of gap states in the intrinsic layer and on the presence of interface states between the p and i layers. The dependence on the thickness of the intrinsic layer has also been investigated and we have found that the agreement with the experimental data is possible only in the presence of interface states. A simplified model which qualitatively explains the results of the complete simulation has been developed. We have also investigated the changes of J‐V characteristics with measurement temperature obtaining results in good agreement with the experimental data without introducing any tunneling mechanism.This publication has 22 references indexed in Scilit:
- Analytical and numerical modeling of amorphous silicon p-i-n solar cellsJournal of Applied Physics, 1988
- The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cellsJournal of Applied Physics, 1988
- Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cellsJournal of Applied Physics, 1988
- High Efficiency Amorphous Silicon Based Solar Cells: A ReviewMRS Proceedings, 1988
- Amorphous silicon p-i-n solar cells with graded interfaceApplied Physics Letters, 1986
- Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodesJournal of Applied Physics, 1985
- A comparison of single- and double-carrier injection in amorphous silicon alloysJournal of Applied Physics, 1985
- Physics of amorphous silicon alloy p-i-n solar cellsJournal of Applied Physics, 1985
- Optical properties and quantum efficiency of a-Si1−xCx:H/a-Si:H solar cellsJournal of Applied Physics, 1985
- Variable minority carrier transport model for amorphous silicon solar cellsSolar Cells, 1983