Sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices
- 1 September 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (9) , 379-381
- https://doi.org/10.1109/55.406794
Abstract
The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. Based on the study, contrary to bulk NMOS devices, for a channel width shrinking from 1 /spl mu/m to 0.2 /spl mu/m, the threshold voltage of mesa-isolated ultra-thin SOI NMOS devices with a 1000 /spl Aring/ thin film doped with 10/sup 17/ cm/sup -3/, decreases by 0.145 V for a front gate oxide of 100 /spl Aring/ and a sidewall oxide of 150 /spl Aring/ as a result of the sidewall edge effect.Keywords
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