An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method
- 1 March 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (5) , 2507-2515
- https://doi.org/10.1063/1.356223
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Influence of N, O and C impurities in a-Si:HJournal of Non-Crystalline Solids, 1991
- Microscopic nature of coordination defects in amorphous siliconPhysical Review B, 1989
- Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous siliconPhysical Review B, 1987
- electron-nuclear-double-resonance-detected ESR of light-soaked undopeda-Si:HPhysical Review B, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Origin of the photo-induced changes in hydrogenated amorphous siliconSolar Cells, 1983
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Defects in bombarded amorphous siliconPhilosophical Magazine Part B, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977