Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A) , L121
- https://doi.org/10.1143/jjap.23.l121
Abstract
InP epitaxial layers are grown on InP(100) substrates by low-pressure metalorganic chemical vapor deposition (MOCVD) without a PH3 pyrolysis oven. Growth rates increase from 1.8 µm/h to 2.4 µm/h and the epitaxial layer quality is improved when the substrate temperatures are increased from 550°C to 650°C. When the molar ratio [PH3]/[TEI] in the vapor is varied between 65 to 325, no significant changes in carrier concentrations and mobilities for epitaxial layers are observed. InP epitaxial layers grown by MOCVD do not show p/n conversion.Keywords
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